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<span style="display: block; border-bottom: 1px solid; padding: 0 1em 2px; margin-bottom: 4px; font-variant: small-caps; font-size: 16px;"> Local | World | Politics | Business | Technology | Health | Entertainment | Environment | Travel | Sports | Video | Opinion | Other</span><div style="display: inline-flex;"><div style="display: inline-block; border-right: 1px solid; padding-right: 4px; min-height: 450px;"><span style="display: block; border-bottom: 1px solid; padding: 1em 0;"><span style="font-size: 21px;">Kuroari Technologies announces breakthrough in silicon transistors.</span>
By <a href="" rel="nofollow"> Seong-Min Choe </a> and <a href="" rel="nofollow"> Hwan Chung </a>
Friday 27 Ochtyr 1584 CE</span>
![[Image: e4pUfbk.png]](http://i.imgur.com/e4pUfbk.png)
A scan of Kuroari Technologies' 5nm transistor, built using an industry-first process to stack silicon nanosheets as the device structure.
After previously abandoning silicon in its latest products, Kuroari researchers detailed a breakthrough in transistor design, and one that will that will continue the march towards smaller and more affordable processors. For decades, the semiconductor industry has obsessed over smallness, and for good reason. The more transistors you can squeeze into a chip, the more speed and power efficiency gains you reap, at a lower cost. The last major breakthrough in silicon allowed for processors at 22nm. However, they quickly ran out of steam as the industry approached 7nm processors. Which required an entirely different method that abandoned silicon completely. III-V semiconductors have now come to an end with this breakthrough. Along with multiple research partners, Kuroari has gone horizontal, layering silicon nanosheets in a way that effectively results in a gate. With the new process, the gains could be at either 40 percent better performance at the same power, or 75 percent reduction in power at the same efficiency. Actual processors built off of this new structure aren’t expected to hit the market until 1587 at the earliest.
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<span style="display: block; border-bottom: 1px solid; padding: 0 1em 2px; margin-bottom: 4px; font-variant: small-caps; font-size: 16px;"> Local | World | Politics | Business | Technology | Health | Entertainment | Environment | Travel | Sports | Video | Opinion | Other</span><div style="display: inline-flex;"><div style="display: inline-block; border-right: 1px solid; padding-right: 4px; min-height: 450px;"><span style="display: block; border-bottom: 1px solid; padding: 1em 0;"><span style="font-size: 21px;">Kuroari Technologies announces breakthrough in silicon transistors.</span>
By <a href="" rel="nofollow"> Seong-Min Choe </a> and <a href="" rel="nofollow"> Hwan Chung </a>
Friday 27 Ochtyr 1584 CE</span>
A scan of Kuroari Technologies' 5nm transistor, built using an industry-first process to stack silicon nanosheets as the device structure.
After previously abandoning silicon in its latest products, Kuroari researchers detailed a breakthrough in transistor design, and one that will that will continue the march towards smaller and more affordable processors. For decades, the semiconductor industry has obsessed over smallness, and for good reason. The more transistors you can squeeze into a chip, the more speed and power efficiency gains you reap, at a lower cost. The last major breakthrough in silicon allowed for processors at 22nm. However, they quickly ran out of steam as the industry approached 7nm processors. Which required an entirely different method that abandoned silicon completely. III-V semiconductors have now come to an end with this breakthrough. Along with multiple research partners, Kuroari has gone horizontal, layering silicon nanosheets in a way that effectively results in a gate. With the new process, the gains could be at either 40 percent better performance at the same power, or 75 percent reduction in power at the same efficiency. Actual processors built off of this new structure aren’t expected to hit the market until 1587 at the earliest.
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